High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser

Akira Nakajima; Yosuke Tateishi; Hiroshi Murakami; Hidetomo Takahashi; Michiharu Ota; Ryoji Kosugi; Takeshi Mitani; Shin Ichi Nishizawa; Hiromichi Ohashi

doi:10.4028/www.scientific.net/MSF.821-823.524

Paper Titles

Passivation of 4H-SiC/SiO₂ Interface Traps by Oxidation of a Thin Silicon Nitride Layer
p.508

MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers
p.512

An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors
p.516

Comparison of Different Novel Chip Separation Methods for 4H-SiC
p.520

High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser
p.524

Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices
p.528

Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking
p.533

Planarization of 6-Inch 4H-SiC Wafer Using Catalyst-Referred Etching
p.537

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
p.541

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High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser

Abstract:

A novel dicing technology that utilizes femtosecond pulsed lasers (FSPLs) are demonstrated as a high-speed and cost-effective dicing process for SiC wafers. The developed dicing process consists of cleavage groove formation on a SiC wafer surface by the FSPL, followed by chip separation by pressing a cleavage blade. The effective FSPL scan speed on the SiC surfaces was 33 mm/s. Kerf loss can be negligible in the developed FSPL dicing process. In addition, the residual lattice strain in the FSPL-diced SiC chips was comparably small to that of the conventional mechanical process using diamond saws, due to the absence of the lattice heating effect in femtosecond-laser processes.