Passivation of 4H-SiC/SiO2 Interface Traps by Oxidation of a Thin Silicon Nitride Layer

A.I. Mikhaylov; Alexey V. Afanasyev; Victor V. Luchinin; Sergey A. Reshanov; Adolf Schöner; Lars Knoll; Renato Amaral Minamisawa; Giovanni Alfieri; Holger Bartolf

doi:10.4028/www.scientific.net/MSF.821-823.508

Paper Titles

Influence of Phosphorous Auto-Doping on the Characteristics of SiO₂/SiC Gate Dielectrics
p.492

Influence of Phosphorus Implantation on Electrical Properties of Al/SiO₂/4H-SiC MOS Structure
p.496

Characteristics of MOS Capacitors with NO and POCl₃ Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC
p.500

Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases
p.504

Passivation of 4H-SiC/SiO₂ Interface Traps by Oxidation of a Thin Silicon Nitride Layer
p.508

MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers
p.512

An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors
p.516

Comparison of Different Novel Chip Separation Methods for 4H-SiC
p.520

High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser
p.524

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Passivation of 4H-SiC/SiO2 Interface Traps by...

Passivation of 4H-SiC/SiO₂ Interface Traps by Oxidation of a Thin Silicon Nitride Layer

Abstract:

The effect of the alternative nitridation process of the 4H-SiC/SiO₂ interface by introduction of a thin silicon nitride layer on the electrical properties of the gate oxide has been investigated. C-V and G-V measurements on inversion-channel MOS devices revealed similar results to the conventional N₂O oxidation. Higher field-effect mobility values are achieved due to lower interface roughness of the alternative nitridation process. However, insignificant degradation of the reliability was observed.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

508-511

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.508

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Online since:

June 2015

Authors:

A.I. Mikhaylov, Alexey V. Afanasyev, Victor V. Luchinin, Sergey A. Reshanov, Adolf Schöner, Lars Knoll, Renato Amaral Minamisawa, Giovanni Alfieri, Holger Bartolf

Keywords:

Breakdown Voltage, C-V Measurement, Interface Trap, Inversion-Channel MOS Devices, Mobility, MOS Interface, MOSFET, Reliability, TZDB

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