An Investigation of Capacitance-Voltage Hysteresis in Al2O3/SiC MIS Capacitors

Yi Yu Wang; Xiao Lei Wang; Cheng Zhan Li; Jia Wu; Lin Chao Han; Hua Jun Shen; Wen Wu Wang; Xin Yu Liu

doi:10.4028/www.scientific.net/MSF.821-823.516

Paper Titles

Characteristics of MOS Capacitors with NO and POCl₃ Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC
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Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases
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Passivation of 4H-SiC/SiO₂ Interface Traps by Oxidation of a Thin Silicon Nitride Layer
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MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers
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An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors
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Comparison of Different Novel Chip Separation Methods for 4H-SiC
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High-Speed Dicing of SiC Wafers by Femtosecond Pulsed Laser
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Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices
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Elimination of Microtrenching in Trenches in 4H-Silicon Carbide Using Shadow Masking
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823An Investigation of Capacitance-Voltage Hysteresis...

An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors

Abstract:

Charge trapping behavior in Al₂O₃/SiC MOS structures was investigated by C-V hysteresis measurements in combination with XPS analysis. According to the quadratic fit of C-V hysteresis vs. t_ox curves, the density of the injected charges in the bulk Al₂O₃ films are the same under different maximum electric field, while the density of sheet charges increase with the increase of maximum electric field. Thus, a simple sheet charge model has been used to evaluate the actual effect of the electron injection phenomenon. The charge trapping levels can be as high as 10¹³ cm^-2, indicating the importance of C-V hysteresis in Al₂O₃/SiC structures. All the trapping charges are found to be located at a distance ranging from 3 to 4 nm from the interface. Furthermore, no detectable interface oxide between Al₂O₃ and SiC has been found through our XPS measurements. We conclude that the origin of charge trapping sites in Al₂O₃/SiC structures is the native defects in ALD Al₂O₃ layer and predominantly the border traps in the Al₂O₃ near the oxide/semiconductor interface.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

516-519

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.516

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Online since:

June 2015

Authors:

Yi Yu Wang, Xiao Lei Wang, Cheng Zhan Li, Jia Wu, Lin Chao Han, Hua Jun Shen*, Wen Wu Wang, Xin Yu Liu

Keywords:

4H-SiC, Al₂O₃, Distribution, Hysteresis, Interface, Trapped Charge Density

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