Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias

Eugenia I. Shabunina; Michael E. Levinshtein; Natalia M. Shmidt; Pavel A. Ivanov; John W. Palmour; Lin Cheng

doi:10.4028/www.scientific.net/MSF.821-823.559

Paper Titles

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth
p.541

Effect of Surface Damage on SiC Wafer Shape
p.545

Planarization of Epitaxial SiC Trench Structures by Plasma Ion Etching
p.549

Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher
p.553

Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias
p.559

Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode
p.563

Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization
p.567

Si_1-xC_x/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current
p.571

Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes
p.575

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Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias

Abstract:

The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, that at 77 K, the dependence of the spectral noise density on current, S_I(I), differs fundamentally between the cases of the current flowing through the main part of the diode area with a comparatively high barrier and the current flowing through the nanosized patches with a comparatively low barrier.