Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

Takahiro Makino; Manato Deki; Shinobu Onoda; Norihiro Hoshino; Hidekazu Tsuchida; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.821-823.575

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Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

Abstract:

The charge induced in SiC-SBDs with different epi-layer thicknesses by ion incidence was measured to understand the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. SiC SBD of which epitaxial-layer thicknesses is close to ion range show larger anomalous charge collection than SBD with thicker epi-layer although the former one has lower electric field than the later one. The gains of collected charge from the SBDs suggest that the impact ionization under 0.16 - 0.18 MV/cm of the static electric field in depletion layer is not dominant mechanisms for the anomalous charge collection. It is suggested that the epitaxial-layer thickness and ion-induced transient high electric field are key to understand the anomalous charge collection mechanisms in SBDs.

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Materials Science Forum (Volumes 821-823)

Pages:

575-578

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.575

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Online since:

June 2015

Authors:

Takahiro Makino*, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, Takeshi Ohshima

Keywords:

Heavy-Ion Irradiation, Impact Ionization, Radiation Tolerance, Schottky Barrier Diode (SBD), Single Event Effect (SEE)

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