Cryogenic to High Temperature Exploration of 4H-SiC W-SBD

Maxime Berthou; Besar Asllani; Pierre Brosselard; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.821-823.583

Paper Titles

Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization
p.567

Si_1-xC_x/Si(001) Heterostructures for Use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current
p.571

Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes
p.575

Fabrication and Application of 1.7KV SiC-Schottky Diodes
p.579

Cryogenic to High Temperature Exploration of 4H-SiC W-SBD
p.583

A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode
p.588

Static and Dynamic Characteristics of SiC MOSFETs and SBDs for 3.3 kV 400 A Full SiC Modules
p.592

Influence of Trench Structure on Reverse Characteristics of 4H-SiC JBS Diodes
p.596

Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes
p.600

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Cryogenic to High Temperature Exploration of...

Cryogenic to High Temperature Exploration of 4H-SiC W-SBD

Abstract:

W-SBD show exceptional reliability from 200 to 500K, however, its barrier analysis has never been performed thoroughly down 81K. This paper shows our study of Schottky barrier and Richardson coefficient was extracted for different temperature ranges. We observed fluctuation in function of the temperature. We analyse this phenomenon and compare it to literature for other barriers. Measurements of reverse characteristics up 1200V have been performed from 81 to 450K. It confirms that partial ionization influence on the drift doping impacts on the barrier height.

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Materials Science Forum (Volumes 821-823)

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583-587

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https://doi.org/10.4028/www.scientific.net/MSF.821-823.583

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June 2015

Authors:

Maxime Berthou*, Besar Asllani, Pierre Brosselard, Philippe Godignon

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