Positron Annihilation in Electron Irradiated GaAs: Atomic Structure and Charge State of the Defects
p.979
p.979
Electrical and Optical Properties of GaAs Doped with Li
p.985
p.985
Metastable States in Semi-Insulating GaAs Revealed by Thermally Stimulated Current Spectroscopy
p.991
p.991
Irradiation-Induced Electronic Levels Removed in the 280K Defect-Annealing Stage of n-GaAs
p.997
p.997
Low Fluence Implantations in GaAs: A Mossbauer Spectroscopy Investigation of Individual and Overlapping Damage Cascades
p.1003
p.1003
Influence of Fluorine on Electrical Properties and Complex Formation in GaAs
p.1009
p.1009
Combined Study of Complex Defects in Semiconductors
p.1015
p.1015
Defects in InP Investigated by the Positron Annihilation Technique
p.1021
p.1021
Localized Vibrational Mode Absorption of Silicon Donors and Beryllium Acceptors in MBE GaAs, InAs and InSb
p.1027
p.1027
Low Fluence Implantations in GaAs: A Mossbauer Spectroscopy Investigation of Individual and Overlapping Damage Cascades
Abstract:
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Periodical:
Materials Science Forum (Volumes 83-87)
Pages:
1003-1008
Citation:
Online since:
January 1992
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© 1992 Trans Tech Publications Ltd. All Rights Reserved
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