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Electrical and Optical Properties of GaAs Doped with Li
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Positron Annihilation in Electron Irradiated GaAs:...

Positron Annihilation in Electron Irradiated GaAs: Atomic Structure and Charge State of the Defects

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

979-984

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.979

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Online since:

January 1992

Authors:

C. Corbel, F. Pierre, Pekka J. Hautojärvi, Kimmo Saarinen, P. Moser

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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