Paper Titles

First-Principles Calculations of the Pressure Dependence of EL2 in its Stable State
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Opticallly Detected Electron-Nuclear Double Resonance of the M_s=0 State of a P_Ga-Y_PSpin-Triplet Center in GaP
p.935

Electrical Activity and Diffusion of Shallow Acceptors in III-V Semiconductors
p.941

Point Defects and their Reactions in Semiinsulating GaAs after Low Temperature e^--Irradiation
p.947

Photoluminescence Related to Si_Ga-Si_As Pairs in GaAs
p.953

EPR Observation of a Deep Center with A p¹ Electron Configuration in GaAs
p.959

Intrinsic Defects in Electron Irradiated p-Type GaAs
p.965

High Temperature NMR Study of Intrinsic Defects in GaAs
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Positron Annihilation in Electron Irradiated GaAs: Atomic Structure and Charge State of the Defects
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Photoluminescence Related to SiGa-SiAs Pairs in...

Photoluminescence Related to Si_Ga-Si_As Pairs in GaAs

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

953-958

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.953

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Online since:

January 1992

Authors:

Masashi Suezawa, Koichi Kasuya, Y. Nishina, Koji Sumino

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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