Paper Titles

Re-Examination of the Configuration Coordinate Diagram of EL2
p.917

Vacancy in the Metastable State of the EL2 Defect in GaAs
p.923

First-Principles Calculations of the Pressure Dependence of EL2 in its Stable State
p.929

Opticallly Detected Electron-Nuclear Double Resonance of the M_s=0 State of a P_Ga-Y_PSpin-Triplet Center in GaP
p.935

Electrical Activity and Diffusion of Shallow Acceptors in III-V Semiconductors
p.941

Point Defects and their Reactions in Semiinsulating GaAs after Low Temperature e^--Irradiation
p.947

Photoluminescence Related to Si_Ga-Si_As Pairs in GaAs
p.953

EPR Observation of a Deep Center with A p¹ Electron Configuration in GaAs
p.959

Intrinsic Defects in Electron Irradiated p-Type GaAs
p.965

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Electrical Activity and Diffusion of Shallow...

Electrical Activity and Diffusion of Shallow Acceptors in III-V Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

941-946

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.941

Citation:

Cite this paper

Online since:

January 1992

Authors:

W. Walukiewicz, Kin Man Yu, L.Y. Chan, J. Jaklevic, Eugene E. Haller

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: