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Vacancy in the Metastable State of the EL2 Defect in GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87First-Principles Calculations of the Pressure...

First-Principles Calculations of the Pressure Dependence of EL2 in its Stable State

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

929-934

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.929

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Online since:

January 1992

Authors:

C. Ziegler, Udo Scherz

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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