Paper Titles

The Isolated Arsenic Antisite Defect and EL2 - An ODMR Investigation of Electron Irradiated Galliumarsenide
p.887

Uniaxial Stress and Zeeman Splitting Studies of EL2-Related Photoluminescence in Gallium Arsenide
p.893

EPR of Anion- and Kation-Antisite-Defects in Plastically Deformed GaAs and GaP
p.899

Generation of Anion-Antisite Defects in n-Type, p-Type and Semi-Insulating InP Studied by MCD-ODMR and MCD-ODENDOR
p.905

Energy Levels Associated with the Metastable State of EL2
p.911

Re-Examination of the Configuration Coordinate Diagram of EL2
p.917

Vacancy in the Metastable State of the EL2 Defect in GaAs
p.923

First-Principles Calculations of the Pressure Dependence of EL2 in its Stable State
p.929

Opticallly Detected Electron-Nuclear Double Resonance of the M_s=0 State of a P_Ga-Y_PSpin-Triplet Center in GaP
p.935

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Energy Levels Associated with the Metastable State...

Energy Levels Associated with the Metastable State of EL2

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Defects in Semiconductors 16

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Materials Science Forum (Volumes 83-87)

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911-916

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.911

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Online since:

January 1992

Authors:

Didier Stiévenard, Christian Delerue, G. Brémond, Gérard Guillot, R. Azoulay, Hans Jürgen von Bardeleben, J.C. Bourgoin, Jean Claude Portal, E. Ranz

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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