Paper Titles

Theory of the Optical Absorption and of the Magnetic Circular Dichroism of Antisite Related Defects in GaAs
p.865

Photoquenching and Photorecovery of the EL2 Defect in n-GaAs under Hydrostatic Pressure
p.875

Interaction of EL2 in Semiinsulating GaAs with above Bandgap Light
p.881

The Isolated Arsenic Antisite Defect and EL2 - An ODMR Investigation of Electron Irradiated Galliumarsenide
p.887

Uniaxial Stress and Zeeman Splitting Studies of EL2-Related Photoluminescence in Gallium Arsenide
p.893

EPR of Anion- and Kation-Antisite-Defects in Plastically Deformed GaAs and GaP
p.899

Generation of Anion-Antisite Defects in n-Type, p-Type and Semi-Insulating InP Studied by MCD-ODMR and MCD-ODENDOR
p.905

Energy Levels Associated with the Metastable State of EL2
p.911

Re-Examination of the Configuration Coordinate Diagram of EL2
p.917

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Uniaxial Stress and Zeeman Splitting Studies of...

Uniaxial Stress and Zeeman Splitting Studies of EL2-Related Photoluminescence in Gallium Arsenide

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

893-898

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.893

Citation:

Cite this paper

Online since:

January 1992

Authors:

M.K. Nissen, A. Villemaire, M.L.W. Thewalt

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: