Paper Titles

Paramagnetic Resonance of Sn in AlGaAs
p.841

Limitations of Ion Channeling for the Study of Bistable Defects
p.847

Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress
p.853

The Structure of DX Centers and EL2
p.859

Theory of the Optical Absorption and of the Magnetic Circular Dichroism of Antisite Related Defects in GaAs
p.865

Photoquenching and Photorecovery of the EL2 Defect in n-GaAs under Hydrostatic Pressure
p.875

Interaction of EL2 in Semiinsulating GaAs with above Bandgap Light
p.881

The Isolated Arsenic Antisite Defect and EL2 - An ODMR Investigation of Electron Irradiated Galliumarsenide
p.887

Uniaxial Stress and Zeeman Splitting Studies of EL2-Related Photoluminescence in Gallium Arsenide
p.893

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Theory of the Optical Absorption and of the...

Theory of the Optical Absorption and of the Magnetic Circular Dichroism of Antisite Related Defects in GaAs

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

865-874

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.865

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Online since:

January 1992

Authors:

Michel Lannoo, Christian Delerue, G. Allan

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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