Paper Titles

Capture Kinetics of the Individual DX Center Levels
p.817

On the Kinetics of Photoconductivity in Al_xGa_1-xAs:Si
p.823

DX Levels in Si-Doped Al_xGa_1-xAs Containing Boron
p.829

Correlation between the Optically Detected Magnetic Resonance and the Photoconductivity of Photo-Ionized DX Centers in Sn-Doped Al_xGa_1-xAs
p.835

Paramagnetic Resonance of Sn in AlGaAs
p.841

Limitations of Ion Channeling for the Study of Bistable Defects
p.847

Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress
p.853

The Structure of DX Centers and EL2
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Theory of the Optical Absorption and of the Magnetic Circular Dichroism of Antisite Related Defects in GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Paramagnetic Resonance of Sn in AlGaAs

Paramagnetic Resonance of Sn in AlGaAs

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

841-846

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.841

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Online since:

January 1992

Authors:

M. Hoinkis, Jacek M. Baranowski, P. Dreszer, Eicke R. Weber, Hermann G. Grimmeiss

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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