DX Levels in Si-Doped AlxGa1-xAs Containing Boron

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

829-834

Citation:

P. M. Mooney et al., "DX Levels in Si-Doped AlxGa1-xAs Containing Boron", Materials Science Forum, Vols. 83-87, pp. 829-834, 1992

Online since:

January 1992

Export:

Price:

$38.00

Fetching data from Crossref.
This may take some time to load.