Paper Titles

Temperature Dependent Photoconductivity Saturation Proves Negative U of Si-DX Centers in AlGaAs
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Correlation Effects due to Ionized Defects in Semiconductors
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Capture Kinetics of the Individual DX Center Levels
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On the Kinetics of Photoconductivity in Al_xGa_1-xAs:Si
p.823

DX Levels in Si-Doped Al_xGa_1-xAs Containing Boron
p.829

Correlation between the Optically Detected Magnetic Resonance and the Photoconductivity of Photo-Ionized DX Centers in Sn-Doped Al_xGa_1-xAs
p.835

Paramagnetic Resonance of Sn in AlGaAs
p.841

Limitations of Ion Channeling for the Study of Bistable Defects
p.847

Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87DX Levels in Si-Doped AlxGa1-xAs Containing Boron

DX Levels in Si-Doped Al_xGa_1-xAs Containing Boron

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

829-834

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.829

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Online since:

January 1992

Authors:

Patricia M. Mooney, M.A. Tischler, B.D. Parker

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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