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Paper Titles
DX Levels in Si-Doped AlxGa1-xAs Containing Boron
p.829
Correlation between the Optically Detected Magnetic Resonance and the Photoconductivity of Photo-Ionized DX Centers in Sn-Doped AlxGa1-xAs
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Paramagnetic Resonance of Sn in AlGaAs
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Limitations of Ion Channeling for the Study of Bistable Defects
p.847
Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress
p.853
The Structure of DX Centers and EL2
p.859
Theory of the Optical Absorption and of the Magnetic Circular Dichroism of Antisite Related Defects in GaAs
p.865
Photoquenching and Photorecovery of the EL2 Defect in n-GaAs under Hydrostatic Pressure
p.875
Interaction of EL2 in Semiinsulating GaAs with above Bandgap Light
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Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

853-858

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.853

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Online since:

January 1992

Authors:

Ming Fu Li, Peter Y. Yu, Eicke R. Weber, E. Bauser, W.L. Hansen, Eugene E. Haller

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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