Paper Titles

Limitations of Ion Channeling for the Study of Bistable Defects
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Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress
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The Structure of DX Centers and EL2
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Theory of the Optical Absorption and of the Magnetic Circular Dichroism of Antisite Related Defects in GaAs
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Photoquenching and Photorecovery of the EL2 Defect in n-GaAs under Hydrostatic Pressure
p.875

Interaction of EL2 in Semiinsulating GaAs with above Bandgap Light
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The Isolated Arsenic Antisite Defect and EL2 - An ODMR Investigation of Electron Irradiated Galliumarsenide
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Uniaxial Stress and Zeeman Splitting Studies of EL2-Related Photoluminescence in Gallium Arsenide
p.893

EPR of Anion- and Kation-Antisite-Defects in Plastically Deformed GaAs and GaP
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Photoquenching and Photorecovery of the EL2 Defect...

Photoquenching and Photorecovery of the EL2 Defect in n-GaAs under Hydrostatic Pressure

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

875-880

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.875

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Online since:

January 1992

Authors:

P. Dreszer, M. Baj, K. Korzeniewski

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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