Photoquenching and Photorecovery of the EL2 Defect in n-GaAs under Hydrostatic Pressure

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

875-880

DOI:

10.4028/www.scientific.net/MSF.83-87.875

Citation:

P. Dreszer et al., "Photoquenching and Photorecovery of the EL2 Defect in n-GaAs under Hydrostatic Pressure", Materials Science Forum, Vols. 83-87, pp. 875-880, 1992

Online since:

January 1992

Export:

Price:

$35.00

In order to see related information, you need to Login.