Paper Titles

The Structure of DX Centers and EL2
p.859

Theory of the Optical Absorption and of the Magnetic Circular Dichroism of Antisite Related Defects in GaAs
p.865

Photoquenching and Photorecovery of the EL2 Defect in n-GaAs under Hydrostatic Pressure
p.875

Interaction of EL2 in Semiinsulating GaAs with above Bandgap Light
p.881

The Isolated Arsenic Antisite Defect and EL2 - An ODMR Investigation of Electron Irradiated Galliumarsenide
p.887

Uniaxial Stress and Zeeman Splitting Studies of EL2-Related Photoluminescence in Gallium Arsenide
p.893

EPR of Anion- and Kation-Antisite-Defects in Plastically Deformed GaAs and GaP
p.899

Generation of Anion-Antisite Defects in n-Type, p-Type and Semi-Insulating InP Studied by MCD-ODMR and MCD-ODENDOR
p.905

Energy Levels Associated with the Metastable State of EL2
p.911

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87The Isolated Arsenic Antisite Defect and EL2 - An...

The Isolated Arsenic Antisite Defect and EL2 - An ODMR Investigation of Electron Irradiated Galliumarsenide

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

887-892

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.887

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Online since:

January 1992

Authors:

K. Krambrock, Johann Martin Spaeth

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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