Paper Titles

Correlation Effects due to Ionized Defects in Semiconductors
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Capture Kinetics of the Individual DX Center Levels
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On the Kinetics of Photoconductivity in Al_xGa_1-xAs:Si
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DX Levels in Si-Doped Al_xGa_1-xAs Containing Boron
p.829

Correlation between the Optically Detected Magnetic Resonance and the Photoconductivity of Photo-Ionized DX Centers in Sn-Doped Al_xGa_1-xAs
p.835

Paramagnetic Resonance of Sn in AlGaAs
p.841

Limitations of Ion Channeling for the Study of Bistable Defects
p.847

Studies of Deep Level Transient Spectroscopy of DX Centers in GaAlAs:Te under Uniaxial Stress
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The Structure of DX Centers and EL2
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Correlation between the Optically Detected...

Correlation between the Optically Detected Magnetic Resonance and the Photoconductivity of Photo-Ionized DX Centers in Sn-Doped Al_xGa_1-xAs

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

835-840

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.835

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Online since:

January 1992

Authors:

M. Fockele, Johann Martin Spaeth, Harald Overhof, Pierre Gibart

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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