Paper Titles

Optically-Detected Magnetic Resonance of Donor States in Al_xGa_1-xAs (x≥0.35) Doped with Group-IV and Group-VI Impurities
p.775

Coexistence of Deep and Shallow Paramagnetic Excited States of the DX Center in GaAlAs
p.787

Magnetic Resonance of X-Point Shallow Donors in AlSb:Te Bulk Crystals and AlSb MBE Layers
p.793

Temperature Dependent Photoconductivity Saturation Proves Negative U of Si-DX Centers in AlGaAs
p.799

Correlation Effects due to Ionized Defects in Semiconductors
p.805

Capture Kinetics of the Individual DX Center Levels
p.817

On the Kinetics of Photoconductivity in Al_xGa_1-xAs:Si
p.823

DX Levels in Si-Doped Al_xGa_1-xAs Containing Boron
p.829

Correlation between the Optically Detected Magnetic Resonance and the Photoconductivity of Photo-Ionized DX Centers in Sn-Doped Al_xGa_1-xAs
p.835

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Correlation Effects due to Ionized Defects in...

Correlation Effects due to Ionized Defects in Semiconductors

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

805-816

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.805

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Online since:

January 1992

Authors:

Zbysław Wilamowski, W. Jantsch, G. Ostermayer, Jacek Kossut

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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