A Photoluminescence Study of the Charge State of a Donor Level in GaAs Induced by Hydrostatic Pressure
p.763
p.763
Laplace Transform DLTS Studies of the DX Centers in GaSb and AlGaAs
p.769
p.769
Optically-Detected Magnetic Resonance of Donor States in AlxGa1-xAs (x≥0.35) Doped with Group-IV and Group-VI Impurities
p.775
p.775
Coexistence of Deep and Shallow Paramagnetic Excited States of the DX Center in GaAlAs
p.787
p.787
Magnetic Resonance of X-Point Shallow Donors in AlSb:Te Bulk Crystals and AlSb MBE Layers
p.793
p.793
Temperature Dependent Photoconductivity Saturation Proves Negative U of Si-DX Centers in AlGaAs
p.799
p.799
Correlation Effects due to Ionized Defects in Semiconductors
p.805
p.805
Capture Kinetics of the Individual DX Center Levels
p.817
p.817
On the Kinetics of Photoconductivity in AlxGa1-xAs:Si
p.823
p.823
Magnetic Resonance of X-Point Shallow Donors in AlSb:Te Bulk Crystals and AlSb MBE Layers
Abstract:
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Periodical:
Materials Science Forum (Volumes 83-87)
Pages:
793-798
Citation:
Online since:
January 1992
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Сopyright:
© 1992 Trans Tech Publications Ltd. All Rights Reserved
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