High Pressure Studies of Electronic States with Small Lattice Relaxation of DX-Centres in GaAs
p.751
p.751
Vibrational Mode Fourier Transform Spectroscopy with a Diamond Anvil Cell: Modes of the Si DX Center and S Related Centers in GaAs
p.757
p.757
A Photoluminescence Study of the Charge State of a Donor Level in GaAs Induced by Hydrostatic Pressure
p.763
p.763
Laplace Transform DLTS Studies of the DX Centers in GaSb and AlGaAs
p.769
p.769
Optically-Detected Magnetic Resonance of Donor States in AlxGa1-xAs (x≥0.35) Doped with Group-IV and Group-VI Impurities
p.775
p.775
Coexistence of Deep and Shallow Paramagnetic Excited States of the DX Center in GaAlAs
p.787
p.787
Magnetic Resonance of X-Point Shallow Donors in AlSb:Te Bulk Crystals and AlSb MBE Layers
p.793
p.793
Temperature Dependent Photoconductivity Saturation Proves Negative U of Si-DX Centers in AlGaAs
p.799
p.799
Correlation Effects due to Ionized Defects in Semiconductors
p.805
p.805
Optically-Detected Magnetic Resonance of Donor States in AlxGa1-xAs (x≥0.35) Doped with Group-IV and Group-VI Impurities
Abstract:
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Periodical:
Materials Science Forum (Volumes 83-87)
Pages:
775-786
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Online since:
January 1992
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© 1992 Trans Tech Publications Ltd. All Rights Reserved
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