High Pressure Studies of Electronic States with Small Lattice Relaxation of DX-Centres in GaAs

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Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

751-756

DOI:

10.4028/www.scientific.net/MSF.83-87.751

Citation:

J.E. Dmochowski et al., "High Pressure Studies of Electronic States with Small Lattice Relaxation of DX-Centres in GaAs", Materials Science Forum, Vols. 83-87, pp. 751-756, 1992

Online since:

January 1992

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$35.00

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