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Paper Titles
Opticallly Detected Electron-Nuclear Double Resonance of the Ms=0 State of a PGa-YPSpin-Triplet Center in GaP
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Electrical Activity and Diffusion of Shallow Acceptors in III-V Semiconductors
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Point Defects and their Reactions in Semiinsulating GaAs after Low Temperature e--Irradiation
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Photoluminescence Related to SiGa-SiAs Pairs in GaAs
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EPR Observation of a Deep Center with A p1 Electron Configuration in GaAs
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Intrinsic Defects in Electron Irradiated p-Type GaAs
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High Temperature NMR Study of Intrinsic Defects in GaAs
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Positron Annihilation in Electron Irradiated GaAs: Atomic Structure and Charge State of the Defects
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Electrical and Optical Properties of GaAs Doped with Li
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EPR Observation of a Deep Center with A p1 Electron Configuration in GaAs

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

959-964

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.959

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Online since:

January 1992

Authors:

Ulrich Kaufmann, M. Baeumler, G. Hendorfer

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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