An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p+ Layers in Silicon

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Periodical:

Materials Science Forum (Volumes 83-87)

Edited by:

Gordon Davies, G.G. DeLeo and M. Stavola

Pages:

39-44

DOI:

10.4028/www.scientific.net/MSF.83-87.39

Citation:

A.D. Marwick et al., "An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p+ Layers in Silicon ", Materials Science Forum, Vols. 83-87, pp. 39-44, 1992

Online since:

January 1992

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$35.00

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