Paper Titles

An Isothermal Pumping Mechanism for the Introduction of High Hydrogen Concentrations in p⁺ Layers in Silicon
p.39

Hydrogen Effusion from Monocrystalline B-Doped Silicon
p.45

Effect of Multiple Trapping on Hydrogen Diffusion in Silicon
p.51

Long-Range Correlations and Hydrogen Diffusion in Silicon
p.57

Charge States of Donor-Hydrogen Pairs in Si: A Fragile Balance
p.63

Rigid Rotor in a Tetrahedral Field: An Application to (H,Be) and (D,Be) in Silicon
p.69

Electron Spin Resonance Study on Hydrogen Passivation of Donors in Silicon
p.75

Interaction of Deuterium with Internal Surfaces in Silicon
p.81

Measurements of the Diffusion Coefficient of Hydrogen in Silicon Monitored by Catalyzed Enhanced Oxygen Diffusion Jumps
p.87

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Charge States of Donor-Hydrogen Pairs in Si: A...

Charge States of Donor-Hydrogen Pairs in Si: A Fragile Balance

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

63-68

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.63

Citation:

Cite this paper

Online since:

January 1992

Authors:

Stefan K. Estreicher, Carleton H. Seager, Robert A. Anderson

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: