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Measurements of the Diffusion Coefficient of Hydrogen in Silicon Monitored by Catalyzed Enhanced Oxygen Diffusion Jumps
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HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Interaction of Deuterium with Internal Surfaces in...

Interaction of Deuterium with Internal Surfaces in Silicon

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Defects in Semiconductors 16

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Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

81-86

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.81

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Online since:

January 1992

Authors:

S.M. Myers, D.M. Follstaedt, H.J. Stein, W.R. Wampler

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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