Paper Titles

Charge States of Donor-Hydrogen Pairs in Si: A Fragile Balance
p.63

Rigid Rotor in a Tetrahedral Field: An Application to (H,Be) and (D,Be) in Silicon
p.69

Electron Spin Resonance Study on Hydrogen Passivation of Donors in Silicon
p.75

Interaction of Deuterium with Internal Surfaces in Silicon
p.81

Measurements of the Diffusion Coefficient of Hydrogen in Silicon Monitored by Catalyzed Enhanced Oxygen Diffusion Jumps
p.87

Measurements Relating to the Solubility of Hydrogen in Silicon at High Temperatures
p.93

Donor-Hydrogen Complexes in Silicon Studied by Mössbauer Spectroscopy
p.99

Depth Profiles for Hydrogen-Assisted Thermal Donor Formation in Silicon
p.105

Passivation of Shallow Acceptors in Si and GaAs by Annealing in H₂
p.111

HomeMaterials Science ForumMaterials Science Forum Vols. 83-87Measurements of the Diffusion Coefficient of...

Measurements of the Diffusion Coefficient of Hydrogen in Silicon Monitored by Catalyzed Enhanced Oxygen Diffusion Jumps

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 16

Info:

Periodical:

Materials Science Forum (Volumes 83-87)

Pages:

87-92

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.83-87.87

Citation:

Cite this paper

Online since:

January 1992

Authors:

R.C. Newman, J.H. Tucker, S.A. McQuaid

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: