Effects of Neutron and Electron Irradiation on 4H-SiC Diodes

Abstract:

4H-SiC Schottky barrier diodes (SBDs) were irradiated to neutron fluence of 3.55 x10¹⁶ cm^-2 and 6.6 x 10¹⁵ cm^-2 (15,000 kGy) electrons respectively. In general, characterization of the irradiated samples show that the current characteristics of the diodes decreased. The performance of Schottky gate contact is less for electron irradiated sample compared to neutron irradiated sample. The d-spacing, crystallite sizes and lattice strains were calculated from X-ray diffraction (XRD) measurements. SiC Schottky interface damage and radiation defects, as observed in atomic force microscopy (AFM) topography and scanning electron microscope (SEM) morphology images is possibly the main reason for this reduction in performance.

• Periodical: Materials Science Forum (Volume 840)
• Pages: 281-286
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.840.281
• Online since: January 2016
• Authors: Yusof Abdullah*, Cik Rohaida Che Hak, Megat Harun Al Rashid Megat Ahmad, Nurul Fadzlin Hasbullah, Mohd Reusmaazran Yusof, Sarimah Mahat, Nurhaslinda Ee Abdullah
• Keywords: Electron, Neutron, Radiation Damage, Schottky Barrier Diode, Silicon Carbide

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