p-Type Conductivity Control in ZnO Films Grown by Molecular-Beam Epitaxy

Seung Hwan Park; Dong Cheol Oh; Chul Gyu Jhun; Seung Oh Han; Takafumi Yao

doi:10.4028/www.scientific.net/MSF.857.131

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HomeMaterials Science ForumMaterials Science Forum Vol. 857p-Type Conductivity Control in ZnO Films Grown by...

p-Type Conductivity Control in ZnO Films Grown by Molecular-Beam Epitaxy

Abstract:

We report on the p-type conductivity control using N and Te codoping and thermal annealing in the ZnO films, heteroepitaxially grown on Al₂O₃ substrates and homoepitaxially grown on ZnO substrates by molecular-beam epitaxy, respectively. The N and Te codoping and the homoepitaxy effectively reduce the background electron concentration in ZnO films due to the suppression of various defect generation, and the thermal annealing causes the conductivity conversion from n-type to p-type due to the activation of N-related defects and the annihilation of donor-type defects. The p-type conductivity with a hole concentration of 1.610¹⁶ cm^-3 and a hole mobility of 16 cm²/Vsec is obtained in the ZnO:N+T film grown on the Al₂O₃ substrate and the p-type conductivity with a hole concentration of 4.010¹⁶ cm^-3 and a hole mobility of 11 cm²/Vsec is obtained in the ZnO:N+Te film grown on the ZnO substrate.

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Advanced Materials Engineering and Technology IV

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Materials Science Forum (Volume 857)

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131-135

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https://doi.org/10.4028/www.scientific.net/MSF.857.131

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Online since:

May 2016

Authors:

Seung Hwan Park, Dong Cheol Oh, Chul Gyu Jhun, Seung Oh Han, Takafumi Yao

Keywords:

Molecular-Beam Epitaxy, P-Type Conductivity, ZNO

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