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HomeMaterials Science ForumMaterials Science Forum Vol. 857Response Surface Methodology (RSM) in Fabrication...

Response Surface Methodology (RSM) in Fabrication of Nanostructured Silicon

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Abstract:

In this paper, a respond surface methodology (RSM) model has been developed using three levels Box-Benkhen experimental design (BBD) technique to study the influence of several metal-assisted chemical etching (MACE) process variables on the properties of nanostructured silicon (Si) wafer. Five process variables are examined i.e. concentrations of silver (Ag), hydrofluoric acid (HF), deposition time, H₂O₂ concentration and etching time as a function of etching rate. Design-Expert^® software (version 7.1) is used in formulating the RSM model of five factors with 46 experiments. A regression quadratic model is developed to correlate the process variables where the most significant factors are identified and validated using analysis of variance (ANOVA). The model for etching rate is found to be significant with R² of 0.8, where both Ag concentrations and etching time are the major influence.

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Advanced Materials Engineering and Technology IV

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Periodical:

Materials Science Forum (Volume 857)

Pages:

151-155

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.857.151

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Online since:

May 2016

Authors:

Ayu Wazira Azhari, Kamaruzzaman Sopian, Dewi Suriyani Che Halin, Abdul Haqi Ibrahim, Saleem Zaidi

Keywords:

Box-Behnken Design, DOE, Mace, RSM, Si Nanostructures

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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