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Characterization of Silicon Carbide Nanowhiskers Synthesized by Microwave Heating Using Photoluminescence Spectroscopy and Fourier Transform Infrared Spectroscopy

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Abstract:

Silicon carbide is an attractive material for engineering and industrial applications in harsh conditions. In manufacturing process, conventional heating process is commonly used to synthesis the silicon carbide. In this study, SiC nanowhiskers were synthesized from microwave heating of mixture of graphite and silica in the ratio of 3: 1. The mixture was heated by using laboratory microwaves oven to 1400°C at heating rate of 20 °C/min and temperature was hold for 30 minutes. Photoluminescence spectroscopy and Fourier transform infrared spectroscopy were used to characterize the SiC nanowhiskers. Photoluminescence spectrum of SiC nanowhiskers showed a sharp peak at 420 nm corresponding to band gap of SiC (2.39 ev). FTIR absorption spectra of SiCNWs recorded a band at 805.22 cm-1 corresponding to Si-C bond.

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Periodical:

Materials Science Forum (Volume 857)

Pages:

116-120

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.857.116

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Online since:

May 2016

Authors:

Suhaimi Mat Kahar, Chun Hong Voon*, Chang Chuan Lee, Kai Loong Foo, Bee Ying Lim, Mohd Khairuddin Md Arshad, Wei Wen Liu, A. Rahim Ruslinda, Uda Hashim, Puah Ying Phing Adelyn, Abdul Rahman Nurul Huda, Hon Cheun Lee, W. Rahman

Keywords:

Microwave Heating, Nanowhiskers, Silicon Carbide, Synthesis

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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