Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence

Larissa Wehrhahn-Kilian; Karl Otto Dohnke; Daniel Kaminzky; Birgit Kallinger; Steffen Oppel

doi:10.4028/www.scientific.net/MSF.858.410

Paper Titles

Dislocation Characterization in 4H-SiC Crystals
p.393

Cross Section and Plan View STEM Analysis on Identical Conversion Point of Basal Plane Dislocation to Threading Edge Dislocation of 4H-SiC
p.397

Characterization of Threading Screw Dislocations of Burgers Vectors with A-Components in 4H-SiC
p.401

Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
p.405

Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence
p.410

Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment
p.414

Ion Implantation Defects in 4H-SiC DIMOSFET
p.418

An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices
p.422

4H-SiC Surface Structures and Oxidation Mechanism Revealed by Using First-Principles and Classical Molecular Dynamics Simulations
p.429

HomeMaterials Science ForumMaterials Science Forum Vol. 858Bipolar Degradation of 6.5 kV SiC pn-Diodes:...

Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence

Abstract:

The stability of 6.5 kV pn-diodes is dependent on the absence of critical crystal defects, such as basal plane dislocations. In this paper, we present a method to detect these defects on wafer level by utilizing photoluminescence (PL). The PL scan is performed immediately after epitaxy and also after the implantation process steps with subsequent high temperature annealing. The analysis of both scans enables the prediction of devices that will drift due to bipolar degradation, and devices that will exhibit non-drifting behaviour. To validate this PL scanning technique, forward bias electrical stress tests have been performed on the fabricated 6.5 kV pn-diodes.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

410-413

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.410

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Online since:

May 2016

Authors:

Larissa Wehrhahn-Kilian*, Karl Otto Dohnke, Daniel Kaminzky, Birgit Kallinger, Steffen Oppel

Keywords:

Bipolar Degradation, Defects, Electrical Stress Test, Photoluminescence, pn-Diode

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