An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices

Jean Baptiste Fonder; Pierre Brosselard; Dominique Tournier; Maxime Berthou; Bertrand Vergne

doi:10.4028/www.scientific.net/MSF.858.422

Paper Titles

Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging
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Bipolar Degradation of 6.5 kV SiC pn-Diodes: Result Prediction by Photoluminescence
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Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment
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Ion Implantation Defects in 4H-SiC DIMOSFET
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An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices
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4H-SiC Surface Structures and Oxidation Mechanism Revealed by Using First-Principles and Classical Molecular Dynamics Simulations
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A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation
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Accuracy of the Energy Distribution of the Interface States at the SiO₂/SiC Interface by Conductance Method
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Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement
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HomeMaterials Science ForumMaterials Science Forum Vol. 858An Ultrafast I-V Measurement Technique Accounting...

An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices

Abstract:

An ultrafast I-V measurement technique has been developed to measure simultaneously C-V and leakage parameters of SiC power devices. After considering the coupled contribution of both static (leakage current) and dynamic (capacitive current) aspects with respect to high dV/dt voltage ramps, a time-based characterization is detailed and validated on SiC Junction Barrier Schottky (JBS) power diodes.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

422-425

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.422

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Online since:

May 2016

Authors:

Jean Baptiste Fonder*, Pierre Brosselard, Dominique Tournier, Maxime Berthou, Bertrand Vergne

Keywords:

C-V Measurements, Electrical Characterization, Leakage Current, SiC JBS Power Diodes

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References

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