Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method

Munetaka Noguchi; Toshiaki Iwamatsu; Hiroyuki Amishiro; Hiroshi Watanabe; Shuhei Nakata; Takeharu Kuroiwa; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.858.437

Paper Titles

Ion Implantation Defects in 4H-SiC DIMOSFET
p.418

An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices
p.422

4H-SiC Surface Structures and Oxidation Mechanism Revealed by Using First-Principles and Classical Molecular Dynamics Simulations
p.429

A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation
p.433

Accuracy of the Energy Distribution of the Interface States at the SiO₂/SiC Interface by Conductance Method
p.437

Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement
p.441

Cathodoluminescence Study of SiO₂/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing
p.445

Characterization of Thermally Oxidized SiO₂/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)
p.449

Dipole Type Behavior of NO Grown Oxides on 4H–SiC
p.453

HomeMaterials Science ForumMaterials Science Forum Vol. 858Accuracy of the Energy Distribution of the...

Accuracy of the Energy Distribution of the Interface States at the SiO₂/SiC Interface by Conductance Method

Abstract:

The electrical characteristics of the SiC metal-oxide-semiconductor field effect transistor (MOSFET) have been limited by large amount of states at the SiO₂/SiC interface. In this study, the accuracy of the energy level of the interface states extracted by hypothetical high frequency extreme, which is conventionally used, is experimentally examined. Conductance measurements at low temperature between 65 K and 100 K reveal that the extracted energy distribution of the interface states at nitrided SiO₂/SiC interface close to the conduction band edge depends on the measurement temperature. It is demonstrated that conductance method at 65K enables us more accurate evaluation of the interface states at the SiO₂/SiC interface and found that the interface states density (D_it) of nitride SiO₂/SiC interface is over 10¹³ cm^-2eV^-1 at energy level of 0.1 eV below the conduction band edge.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

437-440

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.437

Citation:

Cite this paper

Online since:

May 2016

Authors:

Munetaka Noguchi, Toshiaki Iwamatsu, Hiroyuki Amishiro, Hiroshi Watanabe, Shuhei Nakata, Takeharu Kuroiwa, Satoshi Yamakawa

Keywords:

Conductance Method, Low Temperature, MOS Interface, SiO₂/SiC

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] H. Yoshioka, T. Nakamura and T. Kimoto, J. Appl. Phys. 112, 024520 (2012).

Google Scholar

[2] N. Yoshida, E. Waki, M. Arai, K. Yamasaki, J. -H. Han, M. Takenaka and S. Takagi, Thin Solid Films 557 (2014) 237-240.

DOI: 10.1016/j.tsf.2013.10.062

Google Scholar

[3] H. Yoshioka, J. Senzaki, A. Shimozato, Y. Tanaka and H. Okumura, AIP Advances 5 (2015) 017109.

Google Scholar

[4] J. Hasegawa, M. Noguchi, M. Furuhashi, S. Nakata, T. Iwasaki, T. Kodera and M. Hatano, J. J. Appl. Phys. 54 (2015) 04DP05.

DOI: 10.7567/jjap.54.04dp05

Google Scholar

[5] H. Yoshioka, T. Nakamura and T. Kimoto, J. Appl. Phys. 115 (2014) 014502.

Google Scholar

[6] R. H. Kikuchi and K. Kita, Appl. Phys. Lett. 105 (2014) 032106.

Google Scholar

[7] H. Matsubara, T. Sasada, M. Takenaka and S. Takagi, J. Appl. Phys. 93 (2008) 032104.

Google Scholar

[8] K. Martens, C. O. Chui, G. Brammertz, B. D. Jaeger, D. Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat, H. E. Maes and G. Groeseneken, IEEE Trans. Electron Dev. 55 (2008) 547-556.

DOI: 10.1109/ted.2007.912365

Google Scholar

[9] M. E. Levinshtein, S. L. Rumyantsev and M. S. Shur, Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, John Wiley & Sons, (2001).

Google Scholar

[10] D. K. Schroder, Semiconductor material and device characterization, John Wiley & Sons, (2006).

Google Scholar