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Paper Titles
A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation
p.433
Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method
p.437
Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement
p.441
Cathodoluminescence Study of SiO2/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing
p.445
Characterization of Thermally Oxidized SiO2/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)
p.449
Dipole Type Behavior of NO Grown Oxides on 4H–SiC
p.453
Importance of SiC Stacking to Interlayer States at the SiC/SiO2 Interface
p.457
Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs
p.461
Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study
p.465

Characterization of Thermally Oxidized SiO2/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)

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Abstract:

Wet and N2O oxidized SiO2/SiC for C-face substrates were comprehensively investigated to clarify the origin of oxide defects which affect channel mobility and threshold voltage stability by using leakage-current analysis. The estimated defects are identified by cathode luminescence, X-ray photoelectron spectroscopy, and high-resolution Rutherford backscattering spectroscopy. The origin of the observed oxide defects might be complex defect of O vacancy defects and/or C related defects including N.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

449-452

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.449

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Online since:

May 2016

Authors:

Yuji Kiuchi*, Hidenori Kitai, Hiromu Shiomi, Masatoshi Tsujimura, Daisuke Nakata, Shinsuke Harada, Yoshiyuki Yonezawa, Kenji Fukuda, Kunihiro Sakamoto, Kimiyoshi Yamasaki, Hiroshi Yano, Hajime Okumura

Keywords:

(000-1), 4H-SiC, Cathode Luminescence, C-Face, Conduction Band Offset, High-Resolution Rutherford Backscattering Spectroscopy, Interface Defects, X-Ray Photoelectron Spectroscopy (XPS)

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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