Paper Titles

Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement
p.441

Cathodoluminescence Study of SiO₂/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing
p.445

Characterization of Thermally Oxidized SiO₂/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)
p.449

Dipole Type Behavior of NO Grown Oxides on 4H–SiC
p.453

Importance of SiC Stacking to Interlayer States at the SiC/SiO₂ Interface
p.457

Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs
p.461

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO₂ Interface during Nitric Oxide Passivation – A First Principles Study
p.465

Nondestructive and Local Evaluation of SiO₂/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
p.469

On the Origin of Threshold Voltage Instability under Operating Conditions of 4H-SiC n-Channel MOSFETs
p.473

HomeMaterials Science ForumMaterials Science Forum Vol. 858Importance of SiC Stacking to Interlayer States at...

Importance of SiC Stacking to Interlayer States at the SiC/SiO₂ Interface

Article Preview

Abstract:

We investigated the effect of SiC stacking on the 4H-SiC/SiO₂ interface via first principles calculations. Interlayer states are observed along the SiC conduction band edge, and are affected by the local structure at the interface. The location of these states changes depending on which of two lattice sites, h or k is at the interface. This difference is important for SiC based metal-oxide-semiconductor field-effect transistors which rely on the electronic structure of the conduction band.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.457

Citation:

Cite this paper

Online since:

May 2016

Authors:

Christopher James Kirkham*, Tomoya Ono

Keywords:

Electronic Structure, First-Principles Calculations, Interface, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2016 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] VV. Afanas'ev, F. Ciobanu, S. Dimitrijev, G. Pensl, and A. Stesmans, Band alignment and defect states at SiC/oxide interfaces, J. Phys.: Condens. Matter 16 (2004) S1839.

DOI: 10.1088/0953-8984/16/17/019

[2] P. Déak, J. Knaup, T. Hornos, C. Thill, A. Gali, and T. Frauenheim, The mechanism of defect creation and passivation at the SiC/SiO2 interface, J. Phys. D 40 (2007) 6242.

DOI: 10.1088/0022-3727/40/20/s09

[3] A. Gavrikov, A. Knizhnik, A. Safonov, A. Scherbinin, A. Bagaturyants, B. Potapkin, A. Chatterjee, and K. Matocha, First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation, J. Appl. Phys. 104 (2008).

DOI: 10.1063/1.3006004

[4] T. Ono and S. Saito, First-principles study on the effect of SiO2 layers during oxidation of 4H-SiC Appl. Phys. Lett. 106 (2015) 081601.

DOI: 10.1063/1.4913598

[5] S. Dhar, S. Haney, L. Cheng, S. -R. Ryu, A. K. Agarwal, L. C. Yu, and K. P. Cheung, Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors, J. Appl. Phys. 108 (2010) 054509.

DOI: 10.1063/1.3484043

[6] G. Liu, B.R. Tuttle, and S. Dhar, Silicon carbide: A unique platform for metal-oxide-semiconductor physics, Appl. Phys. Rev. 2 (2015) 021307.

DOI: 10.1063/1.4922748

[7] Y. Matsushita, S. Furuya, and A. Oshiyama, Floating Electron States in Covalent Semiconductors, Phys. Rev. Lett. 108 (2012) 246404.

DOI: 10.1103/physrevlett.108.246404

[8] Y. Matsushita and A. Oshiyama, Interstitial Channels that Control Band Gaps and Effective Masses in Tetrahedrally Bonded Semiconductors, Phys. Rev. Lett. 112 (2014) 136403.

DOI: 10.1103/physrevlett.112.136403

[9] K. Hirose, T. Ono, Y. Fujimoto, and S. Tsukamoto, First Principles Calculations in Real-Space Formalism, Electronic Conﬁgurations and Transport Properties of Nanostructures, Imperial College, London, (2005).

DOI: 10.1142/p370

[10] J. R. Chelikowsky, N. Troullier, and Y. Saad, Finite-difference-pseudopotential method: Electronic structure calculations without a basis, Phys. Rev. Lett. 72 (1994) 1240.

DOI: 10.1103/physrevlett.72.1240

[11] T. Ono and K. Hirose, Timesaving Double-Grid Method for Real-Space Electronic-Structure Calculations, Phys. Rev. Lett. 82 (1999) 5016.

DOI: 10.1103/physrevlett.82.5016

[12] T. Ono and K. Hirose, Real-space electronic-structure calculations with a time-saving double-grid technique, Phys. Rev. B 72 (2005) 085115.

DOI: 10.1103/physrevb.72.085115

[13] T. Ono, M. Heide, N. Atodiresei, P. Baumeister, S. Tsukamoto, and S. Blügel, Real-space electronic structure calculations with full-potential all-electron precision for transition metals, Phys. Rev. B 82 (2010) 205115.

DOI: 10.1103/physrevb.82.205115

[14] P.E. Blöchl, Projector augmented-wave method, Phys. Rev. B 50 (1994) 17953.

DOI: 10.1103/physrevb.50.17953

[15] L. Kleinman and D.M. Bylander, Efficacious Form for Model Pseudopotentials, Phys. Rev. Lett. 48 (1982) 1425.

DOI: 10.1103/physrevlett.48.1425

[16] N. Troullier and J.L. Martins, Efficient pseudopotentials for plane-wave calculations, Phys. Rev. B 43 (1991) (1993).

DOI: 10.1103/physrevb.43.1993

[17] S. H. Vosko, L. Wilk, and M. Nusair, Accurate spin-dependent electron liquid correlation energies for local spin density calculations: a critical analysis, Can. J. Phys. 58 (1980) 1200.

DOI: 10.1139/p80-159