Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs

Ronald Green; Aivars J. Lelis; Daniel B. Habersat

doi:10.4028/www.scientific.net/MSF.858.461

Paper Titles

Cathodoluminescence Study of SiO₂/4H-SiC Structures Treated with High-Temperature Post-Oxidation Annealing
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Characterization of Thermally Oxidized SiO₂/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)
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Dipole Type Behavior of NO Grown Oxides on 4H–SiC
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Importance of SiC Stacking to Interlayer States at the SiC/SiO₂ Interface
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Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs
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Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO₂ Interface during Nitric Oxide Passivation – A First Principles Study
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Nondestructive and Local Evaluation of SiO₂/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
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On the Origin of Threshold Voltage Instability under Operating Conditions of 4H-SiC n-Channel MOSFETs
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Pragmatic Approach to the Characterization of SiC/SiO₂ Interface Traps near the Conduction Band with Split C-V and Hall Measurements
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Measurement Issues Affecting Threshold-Voltage...

Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs

Abstract:

This work focuses on measurement issues that affect the accuracy of positive bias temperature instability measurements of SiC power MOSFETs using a conventional sweep technique to characterize the threshold voltage, V_T. Threshold-voltage shifts occurring during stress are readily recoverable during the measurement, resulting in an underestimation in V_T degradation. Recovery of V_T due to gate-stress relaxation before or during the measurement was a major source of measurement error that was mitigated by performing an immediate sweep down in gate voltage, V_GS, from the stress bias toward threshold. Allowing the gate bias to drop to zero just prior to measuring by sweeping V_GS positively resulted in smaller observed degradation due to V_T recovery. This result is important, especially in cases where the gate stress has to be completely removed before making any electrical measurements. The V_T shift caused by bias stress can quickly recover and yield test results that underestimate the effect of the applied stress. A full recovery of V_T was observed following a positive gate bias stress for conditions where the gate was either subject to a negative gate voltage for a few seconds, or when V_GS was maintained at zero volts for several minutes.

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Materials Science Forum (Volume 858)

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461-464

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.461

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Online since:

May 2016

Authors:

Ronald Green*, Aivars J. Lelis, Daniel B. Habersat

Keywords:

SiC MOSFET, Threshold Voltage Instability, V_T Instability

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