Nondestructive and Local Evaluation of SiO2/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

Norimichi Chinone; R. Kosugi; Yasunori Tanaka; Shinsuke Harada; Hajime Okumura; Yasuo Cho

doi:10.4028/www.scientific.net/MSF.858.469

Paper Titles

Dipole Type Behavior of NO Grown Oxides on 4H–SiC
p.453

Importance of SiC Stacking to Interlayer States at the SiC/SiO₂ Interface
p.457

Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs
p.461

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO₂ Interface during Nitric Oxide Passivation – A First Principles Study
p.465

Nondestructive and Local Evaluation of SiO₂/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
p.469

On the Origin of Threshold Voltage Instability under Operating Conditions of 4H-SiC n-Channel MOSFETs
p.473

Pragmatic Approach to the Characterization of SiC/SiO₂ Interface Traps near the Conduction Band with Split C-V and Hall Measurements
p.477

Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress
p.481

Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode
p.485

HomeMaterials Science ForumMaterials Science Forum Vol. 858Nondestructive and Local Evaluation of SiO2/SiC...

Nondestructive and Local Evaluation of SiO₂/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

Abstract:

SiO₂/SiC interface was investigated by using super-higher-order (SHO) scanning nonlinear dielectric microscopy (SNDM) with high spatial resolution. Comparison of non-oxidized and thermally oxidized 4H-SiC wafer (Si-face) revealed that only 5 min oxidation makes the interface quality spatially inhomogeneous. Next four SiC wafers treated under different post oxidation annealing (POA) conditions in NO ambient (three “with” and one “without” POA) were also compared. Using SHO-SNDM, local capacitance-voltage (C-V) curves were obtained. The local C-V curve obtained in sample with POA was more close to ideal C-V curve compared to the C-V curves obtained in the sample without POA. In addition, two-dimensional normalized SNDM images taken on the four SiC wafers were observed, which showed that the spatial deviation of interface state was reduced by the POA treatment. Moreover, standard deviations s of the normalized SNDM images were calculated. Then, very strong correlations between σ and interface-state density D_it as well as channel electron mobility μ_FEwere observed.