Pragmatic Approach to the Characterization of SiC/SiO2 Interface Traps near the Conduction Band with Split C-V and Hall Measurements

Tetsuo Hatakeyama; Kazuto Takao; Yoshiyuki Yonezawa; Hiroshi Yano

doi:10.4028/www.scientific.net/MSF.858.477

Paper Titles

Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs
p.461

Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO₂ Interface during Nitric Oxide Passivation – A First Principles Study
p.465

Nondestructive and Local Evaluation of SiO₂/SiC Interface Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
p.469

On the Origin of Threshold Voltage Instability under Operating Conditions of 4H-SiC n-Channel MOSFETs
p.473

Pragmatic Approach to the Characterization of SiC/SiO₂ Interface Traps near the Conduction Band with Split C-V and Hall Measurements
p.477

Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress
p.481

Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode
p.485

Ultra-Fast SiC Wafer Surface Roughness Mapping
p.489

Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al₂O₃ Films
p.493

HomeMaterials Science ForumMaterials Science Forum Vol. 858Pragmatic Approach to the Characterization of...

Pragmatic Approach to the Characterization of SiC/SiO₂ Interface Traps near the Conduction Band with Split C-V and Hall Measurements

Abstract:

A simple and practical method of characterizing traps at SiC/SiO₂ interfaces close to the bottom of the conduction band by using the split C−V and Hall measurements is proposed. This technique was applied to the characterization of traps at a wet-oxidized SiC/SiO₂interface on C-face and those at an oxynitrided SiC/SiO₂interface on Si-face. It was shown that the density of traps near the conduction band of the oxynitrided SiC/SiO₂interface was more than 10 times larger than that of the wet-oxidized SiC/SiO₂interface.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

477-480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.477

Citation:

Cite this paper

Online since:

May 2016

Authors:

Tetsuo Hatakeyama*, Kazuto Takao, Yoshiyuki Yonezawa, Hiroshi Yano

Keywords:

Characterization, Conduction Band, C-V, Density of Interface States, Hall Measurement, Interface, Interface States, MOS, MOSFET, Silicon Carbide (SiC), Trap

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] E. Arnold and D. Alok, IEEE Trans. Electron Dev. 48 (2001) 1870.

Google Scholar

[2] G. Ortiz, C. Strenger, V. Uhnevionak, A. Burenkov, A. J. Bauer, P. Pichler, F. Cristiano, E. Bedel-Pereira, and V. Mortet, Appl. Phys. Lett. 106 (2015) 062104.

DOI: 10.4028/www.scientific.net/msf.821-823.737

Google Scholar

[3] E. Nicollian and H. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, Hoboken, NJ, (2002).

Google Scholar

[4] S. Ono, E. Waki, M. Arai, K. Yamazaki and S. Takagi: Mater. Sci. Forum. 778-780 (2014) 571.

Google Scholar

[5] M. Tsujimura et al.: proceedings of the first meeting of the advanced power electronics division of the Japan society of applied physics, P-96 (2014).

Google Scholar