Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

Wei Fang Lu; Yi Yu Ou; Valdas Jokubavicius; Ahmed Fadil; Mikael Syväjärvi; Volker Buschmann; Steffen Rüttinger; Paul Michael Petersen; Hai Yan Ou

doi:10.4028/www.scientific.net/MSF.858.493

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HomeMaterials Science ForumMaterials Science Forum Vol. 858Photoluminescence Enhancement in Nanotextured...

Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al₂O₃ Films

Abstract:

The influence of thickness of atomic layer deposited Al₂O₃ films on nanotextured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al₂O₃ layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These result show that an Al₂O₃ layer could serve as passivation in fluorescent SiC based white LEDs applications.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

493-496

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.493

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Online since:

May 2016

Authors:

Wei Fang Lu*, Yi Yu Ou, Valdas Jokubavicius, Ahmed Fadil, Mikael Syväjärvi, Volker Buschmann, Steffen Rüttinger, Paul Michael Petersen, Hai Yan Ou

Keywords:

Al₂O₃, Atomic Layer Deposition (ALD), Fluorescent SiC, Lifetime, Passivation, Photoluminescence

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