Concentration Profile Simulation of SiC/Si Heterostructures

Joerg Pezoldt; V.S. Kharlamov; Dmitri V. Kulikov; Maxim N. Lubov; Yuri V. Trushin

doi:10.4028/www.scientific.net/MSF.858.501

Paper Titles

Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode
p.485

Ultra-Fast SiC Wafer Surface Roughness Mapping
p.489

Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al₂O₃ Films
p.493

Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging
p.497

Concentration Profile Simulation of SiC/Si Heterostructures
p.501

Development of the Compact Furnace for the In Situ Observation under Ultra-High Temperature by Synchrotron x-Ray Surface Diffraction
p.505

Accurate Doping Density Determination in SiC with Constant Surface Potential Corona Charging; Industry Ready Alternative to Hg-CV
p.509

A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs
p.513

1950°C Annealing of Al⁺ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time
p.523

HomeMaterials Science ForumMaterials Science Forum Vol. 858Concentration Profile Simulation of SiC/Si...

Concentration Profile Simulation of SiC/Si Heterostructures

Abstract:

Computer simulation of the concentration profiles evolution in SiC/Si heterostructures during growth and subsequent ion sputtering is presented. Simulation is based on a complex self-consistent approach combining kinetic and ballistic methods. Within the framework of the proposed method concentration depth profiles in SiC/Si heterostructure with pre-deposited Ge impurity are calculated and compared with experimental sputtering profiles obtained by secondary ion mass spectrometry.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

501-504

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.501

Citation:

Cite this paper

Online since:

May 2016

Authors:

Joerg Pezoldt*, V.S. Kharlamov, Dmitri V. Kulikov, Maxim N. Lubov, Yuri V. Trushin

Keywords:

Computer Simulation, Rate Equation, SiC/Si Heterostructures, SIMS, Sputter Depth Profiling

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] T. Hatayama, N. Tanaka, T. Fuyuki, H. Matsunami, Appl. Phys. Lett. 70 (1997) 1411-1413.

Google Scholar

[2] T. Fuyuki, T. Hatayama, H. Matsunami, Phys. Status Solidi B 202 (1997) 359-378.

Google Scholar

[3] J. Pezoldt, P. Masri, M. Rouhani Laridjani, M. Averous, T. Wöhner, J. A. Schaefer, Th. Stauden, G. Ecke, R. Pieterwas, L. Spieß, Mater. Sci. Forum 338-342 (2000) 289-292.

DOI: 10.4028/www.scientific.net/msf.338-342.289

Google Scholar

[4] J. Pezoldt, B. Schröter, V. Cimalla, P. Masri, Phys. Status Solidi A 185 (2001) 159-166.

Google Scholar

[5] K.L. Safonov, A.A. Schmidt, Yu.V. Trushin, D.V. Kulikov, J. Pezoldt, Mater. Sci. Forum 433-436 (2003) 591-594.

Google Scholar

[6] A.A. Schmidt, Yu.V. Trushin, K.L. Safonov, V.S. Kharlamov, D.V. Kulikov, O. Ambacher, J. Pezoldt, Mater. Sci. Forum 527-529 (2006) 315-318.

DOI: 10.4028/www.scientific.net/msf.527-529.315

Google Scholar

[7] J. Pezoldt, V.S. Kharlamov, D.V. Kulikov, M.N. Lubov, Yu.V. Trushin, J. Comp. Theor. NanoSci. 9 (2012) 1941-(1966).

Google Scholar

[8] B.J. Ber, V.S. Kharlamov, Yu.A. Kudrjavtsev, A.V. Merkulov, Yu.V. Trushin, E.E. Zhurkin, Nucl. Instr. Meth. B 127-128 (1997) 286-290.

Google Scholar

[9] Yu.V. Trushin, B.J. Ber, V.S. Kharlamov, E.E. Zhurkin, J. Nucl. Mater. 233-237 (1996) 991-995.

Google Scholar

[10] V.S. Kharlamov, D.V. Kulikov, Yu.V. Trushin, P. Nader, P. Masri, Th. Stauden, J. Pezoldt, Bull. Russ. Acad. Sci.: Phys. 74 (2010) 241-244.

DOI: 10.3103/s1062873810020292

Google Scholar

[11] N.E.B. Cowern, P.C. Zalm, P. van der Sluis, D.J. Gravesteijn, W.B. de Boer, Phys. Rev. Lett. 72 (1994) 2585-2588.

DOI: 10.1103/physrevlett.72.2585

Google Scholar

[12] P. Fahey, S.S. Iyer and G.J. Scilla, Appl. Phys. Lett. 54 (1989) 843-845.

Google Scholar

[13] J. Pezoldt, Ch. Foerster, P. Weih, P. Masri, Appl. Surf. Sci. 184 (2001) 79-83.

Google Scholar

[14] M. Meuris, W. Vandervorst, J. Jackman, J. Vac. Sci. Tech. A 9 (1991) 1482-1488.

Google Scholar