A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs

Mark A. Anders; Patrick M. Lenahan; Aivars J. Lelis

doi:10.4028/www.scientific.net/MSF.858.513

Paper Titles

Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging
p.497

Concentration Profile Simulation of SiC/Si Heterostructures
p.501

Development of the Compact Furnace for the In Situ Observation under Ultra-High Temperature by Synchrotron x-Ray Surface Diffraction
p.505

Accurate Doping Density Determination in SiC with Constant Surface Potential Corona Charging; Industry Ready Alternative to Hg-CV
p.509

A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs
p.513

1950°C Annealing of Al⁺ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time
p.523

Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC
p.527

Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices
p.531

High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing
p.535

HomeMaterials Science ForumMaterials Science Forum Vol. 858A Surprising Result: “Bulk” SiC Defects in the...

A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs

Abstract:

We utilize electrically detected magnetic resonance and “on-the-fly” elevated temperature stressing to examine the effects of negative bias temperature stress on defects within the “bulk” SiC, that is, below the SiC/SiO₂ interface. We observe generation of two temperature-dependent defects; one has a two (or three) line spectrum with lines separated by about 61 (30) Gauss when the SiC/SiO₂ interface is perpendicular to the magnetic field and very slightly less, about 59 (30) Gauss when the SiC/SiO₂ interface is parallel to the field. The second spectrum has a single line with zero-crossing g = 2.0118 when the magnetic field is nearly perpendicular to the SiC/SiO₂ interface; the g-value drops to about 2.0016 with the field parallel to the SiC/SiO₂ interface. We also observe strong evidence for hydrogen motion within the “bulk” SiC, as both spectra broaden significantly at elevated temperature, with broadening at both high and low fields and frequencies.