Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC

Akihiro Ikeda; Rikuho Sumina; Hiroshi Ikenoue; Tanemasa Asano

doi:10.4028/www.scientific.net/MSF.858.527

Paper Titles

Development of the Compact Furnace for the In Situ Observation under Ultra-High Temperature by Synchrotron x-Ray Surface Diffraction
p.505

Accurate Doping Density Determination in SiC with Constant Surface Potential Corona Charging; Industry Ready Alternative to Hg-CV
p.509

A Surprising Result: “Bulk” SiC Defects in the Negative Bias Instability in 4H-SiC MOSFETs
p.513

1950°C Annealing of Al⁺ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time
p.523

Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC
p.527

Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices
p.531

High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing
p.535

Silicon Carbide Recrystallization Mechanism by Non-Equilibrium Melting Laser Anneal
p.540

Warpage Structure of 4H-SiC after Implantation and Annealing Processes
p.544

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Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC

Abstract:

Al doping of 4H-SiC with high surface concentration and deep depth profile is found to be realized by irradiating single-pulse excimer laser to an Al film deposited on the surface. Optical emission spectra suggest that high-temperature molten Al is produced behind the laser-generated high-density Al plasma and Al is diffused from the molten Al into 4H-SiC. The Al doping depth reaches to ~200 nm by irradiating a single laser pulse. A pn junction diode fabricated by the doping with the molten Al shows on/off ratio over 10 orders of magnitude.