Warpage Structure of 4H-SiC after Implantation and Annealing Processes

Kotaro Ishiji; Seiji Kawado; Yasuharu Hirai; Shinji Nagamachi

doi:10.4028/www.scientific.net/MSF.858.544

Paper Titles

Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC
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Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices
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High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing
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Silicon Carbide Recrystallization Mechanism by Non-Equilibrium Melting Laser Anneal
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Warpage Structure of 4H-SiC after Implantation and Annealing Processes
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Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing
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Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase
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Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300°C in Air
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Ohmic Contact for Silicon Carbide by Carbon Nanotubes
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Warpage Structure of 4H-SiC after Implantation and...

Warpage Structure of 4H-SiC after Implantation and Annealing Processes

Abstract:

The warpage structure of 4°-off-axis (0001) 4H-SiC samples after implantation and annealing processes was investigated using white light interferometry (WLI) and X-ray rocking curve (XRC) measurements. The WLI images showed that the surface warpage of the 300 °C-implanted/annealed SiC sample was small and almost the same as that of the un-implanted SiC sample, but the 30 and 150 °C-implanted/annealed SiC samples had a typically saddle-like warpage. The XRCs of the 0008-reflection were measured using monochromatic X-rays with different energies to change the X-ray penetration depth. The subtracted XRCs were reconstructed, and then the depth-dependence of the curvature radius of the 0008-reflection was evaluated. The results indicated that the saddle-like warpage of the 30 and 150 °C-implanted/annealed samples relaxed with increasing depth.