Ohmic Contact for Silicon Carbide by Carbon Nanotubes

Masafumi Inaba; Kazuma Suzuki; Yu Hirano; Wataru Norimatsu; Michiko Kusunoki; Hiroshi Kawarada

doi:10.4028/www.scientific.net/MSF.858.561

Paper Titles

Warpage Structure of 4H-SiC after Implantation and Annealing Processes
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Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing
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Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase
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Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300°C in Air
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Ohmic Contact for Silicon Carbide by Carbon Nanotubes
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Low Thermal Budget Ohmic Contact Formation by Laser Anneal
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Impact of Contact Material Deposition Technique on the Properties of Ti/4H-SiC Schottky Structures
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4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts
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An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Ohmic Contact for Silicon Carbide by Carbon...

Ohmic Contact for Silicon Carbide by Carbon Nanotubes

Abstract:

The electrical contact properties of silicon carbide (SiC) and carbon nanotubes (CNTs) were measured by conductive atomic force microscopy (C-AFM). A CNT forest was synthesized by SiC surface decomposition. Trenches, which electrically separate the conduction area, were fabricated using a focused ion beam (FIB) without a cover layer, and the resistance of each island was measured by C-AFM. From the dependence of the resistance on the CNT forest island size, the contact resistance between the CNTs and the SiC substrate was measured. By varying the dopant density in the SiC substrate, the Schottky barrier height was evaluated to be ~0.5 eV. This is slightly higher than a previously reported result obtained from a similar setup with a metal covering the CNT forest. We assumed that the damaged region existed in the islands, which is due to the trench formation by the FIB. The commensurate barrier height was obtained with the length of the damaged region assumed to be ~3 μm. Here, we could estimate the resistivity of a CNT/SiC interface without a cover layer. This indicates that a CNT forest on SiC is useful as a brief contact electrode.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

561-564

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.561

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Online since:

May 2016

Authors:

Masafumi Inaba*, Kazuma Suzuki, Yu Hirano, Wataru Norimatsu, Michiko Kusunoki, Hiroshi Kawarada

Keywords:

Carbon Nanotube, Contact Resistivity, Schottky Barrier, Silicon Carbide (SiC)

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