Impact of Contact Material Deposition Technique on the Properties of Ti/4H-SiC Schottky Structures

Laura Stöber; Michael Schneider; Ulrich Schmid

doi:10.4028/www.scientific.net/MSF.858.569

Paper Titles

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase
p.553

Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300°C in Air
p.557

Ohmic Contact for Silicon Carbide by Carbon Nanotubes
p.561

Low Thermal Budget Ohmic Contact Formation by Laser Anneal
p.565

Impact of Contact Material Deposition Technique on the Properties of Ti/4H-SiC Schottky Structures
p.569

4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts
p.573

An Investigation of SiC Schottky Contact Barrier Inhomogeneity for Temperature Sensing Applications
p.577

Threshold-Voltage Instability in SiC MOSFETs Due to Near-Interfacial Oxide Traps
p.585

Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance
p.591

HomeMaterials Science ForumMaterials Science Forum Vol. 858Impact of Contact Material Deposition Technique on...

Impact of Contact Material Deposition Technique on the Properties of Ti/4H-SiC Schottky Structures

Abstract:

In this paper, we report on the performance of Ti/4H-SiC Schottky junctions, whereas the contact material is either e-beam evaporated or magnetron sputter deposited. When applying the first technique, the Schottky barrier height is lowered at room temperature by about 80 meV or by about 160 meV extracted from current/voltage and capacitance/voltage measurements, respectively. Furthermore, e-beam evaporation of the Ti contact results in an ideality factor closer to 1 when comparing structures of the same design.