Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase

Tony Abi-Tannous; Maher Soueidan; Gabriel Ferro; Mihai Lazar; Christophe Raynaud; Bruno Gardiola; Dominique Planson

doi:10.4028/www.scientific.net/MSF.858.553

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HomeMaterials Science ForumMaterials Science Forum Vol. 858Thermally Stable Ohmic Contact to p-Type 4H-SiC...

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase

Abstract:

In this study, the electrical properties of Ti₃SiC₂based ohmic contacts formed on p-type 4H-SiC(0001) 4°-off substrates were studied. The Ti₃SiC₂thin films were grown by thermal annealing (from 900°C to 1200°C) of Ti₅₀Al₅₀ layer deposited by magnetron sputtering. XRD analyzes were performed on the samples to further investigate the compounds formed after annealing. Using TLM structures, the Specific Contact Resistance (SCR) at room temperature of all contacts was measured. The temperature dependence (up to 600°C) of the SCR was studied to understand the current mechanisms at the interface and to determine the barrier height value by fitting the experimental results using the thermionic field emission theory. Aging tests showed that Ti₃SiC₂based contacts were stable up to 200h at 600°C under Ar.

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Materials Science Forum (Volume 858)

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553-556

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.553

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Online since:

May 2016

Authors:

Tony Abi-Tannous*, Maher Soueidan, Gabriel Ferro, Mihai Lazar, Christophe Raynaud, Bruno Gardiola, Dominique Planson

Keywords:

p-Type 4H-SiC, Tfe, Ti₃SiC₂, Ti-Al Ohmic Contacts

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