Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing

Wijemuni De Silva; Seiji Ishikawa; Takamaro Kikkawa; Shin Ichiro Kuroki

doi:10.4028/www.scientific.net/MSF.858.549

Paper Titles

Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices
p.531

High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing
p.535

Silicon Carbide Recrystallization Mechanism by Non-Equilibrium Melting Laser Anneal
p.540

Warpage Structure of 4H-SiC after Implantation and Annealing Processes
p.544

Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing
p.549

Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase
p.553

Ohmic Contact Reliability of Commercially Available SiC MOSFETs Isothermally Aged for Long Periods at 300°C in Air
p.557

Ohmic Contact for Silicon Carbide by Carbon Nanotubes
p.561

Low Thermal Budget Ohmic Contact Formation by Laser Anneal
p.565

HomeMaterials Science ForumMaterials Science Forum Vol. 858Low Resistance Ohmic Contact Formation on 4H-SiC...

Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing

Abstract:

Non-equilibrium laser silicidations for low-resistance ohmic contact to 4H-SiC C-face with carbon-interstitial type metal, Nb was demonstrated. In a conventional nickel silicide (NiSi) electrode on SiC, a carbon agglomeration at the silicide/SiC interface occurs, and constant resistance between NiSi and SiC substrate becomes larger. For suppressing the carbon agglomeration, in this research, nanoseconds non-equilibrium laser annealing was introduced, and also carbon-interstitial type metal Nb to form metal carbides was introduced. Ni/Nb/SiC multilayer contact and NbNi mixed contact were formed on C-face side of 4H-SiC wafers. Electrical contact properties were investigated after 45 nanoseconds pulse laser annealing in N₂ambient. As the result, at the NbNi mixed contact, specific contact resistance of 2.4×10^-4Ωcm² was realized.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2015

View Preview

Info:

Periodical:

Materials Science Forum (Volume 858)

Pages:

549-552

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.549

Citation:

Cite this paper

Online since:

May 2016

Authors:

Wijemuni De Silva*, Seiji Ishikawa, Takamaro Kikkawa, Shin Ichiro Kuroki

Keywords:

Laser Annealing, Ohmic Contact, Silicidation, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] B. Barda, M. Kudrnova, Microelectronnic Engineering, 106 (2013) 132-138.

Google Scholar

[2] J. Rogowski, A. Kubiak, Materials Science and Engineering B, 177 (2012) 1318-1322.

Google Scholar

[3] S. Cichon, P. Machac, B. Barda, V. Machovic, and P. Slepicka, Thin Solid Films, 520 (2012) 4378-4388.

Google Scholar

[4] F. La Via, F. Roccaforte, V. Raineri, M. Mauceri, A. Ruggiero, P. Musumeci, L. Calcagno, A. Castaldini, A. Cavallini, Microelectronic Engineering, 70 (2003) 519-523.

DOI: 10.1016/s0167-9317(03)00464-7

Google Scholar

[5] J. Kawai, K. Horibuchi, Y. Kimoto, and Y. Watanabe, Abstracts of 1st Meeting on Advanced Power Semiconductors, The Japan society of Applied Physics, p-38 (2014) 112-113.

Google Scholar

[6] K. Jung, Y. Sutou, and J. Koike, Thin Solid Films, 520 (2012) 6922-6928.

DOI: 10.1016/j.tsf.2012.04.004

Google Scholar

[7] Dieter K. Schroder, Semiconductor Material and device characterization, Third ed., Arizona State University, Tempe, AZ, (2006) pp.135-149.

Google Scholar